Product details
  • Product name: HPXX-VDC-0850-1 850nm VCSEL High-Power
  • Added time: 2018-09-27
  • Views : 13

Inquiry

Feature

 

Ø   High PCE(Power Conversion Efficiency):43%

Ø  Wavelength:  850nm

Ø  Chip size: 1000x1000 ± 15μm

Ø  Chip thickness :  150 ± 10μm

Ø  Drive current : 1.2A

Ø  Output power : 1W

Ø  Electrode side : Gold alloy on both anode

P (emission side) and cathode N (backside)

Ø  Other configurations available on request                    

                                   

Application

Ø  Moving sensor/ Gesture

Ø  Photoelectric sensors

Ø  Optical encoders

Ø  3D sensing

 

Opto-Electrial Characteristics

 

Parameter

Symbol

Min.

Typ.

Max.

Unit

Note

Threshold Current

Ith

 

180

300

mA

 

Forward Voltage

Vf

1.8

2.1

2.3

IOP=1.2A

Output Power 

Po 

0.8

1

1.2

W

IOP=1.2A

Slop Efficiency

SE

0.8

1

 

W/A

 

Center Wavelength

λc

840

850

860

nm 

IOP=1.2A

Wavelength Shift

λ/T

 

0.07

 

nm/°C

IOP=1.2A

Beam Divergence

θ

 

24

 

Degree

Full width 1/e²

 

Absolute Maximum Rating

 

 

Parameter

Symbol

Range

Unit

Note

Storage temperature

Tstg

-20~85

 

Operating temperature (VCSEL)

Top

-40~85

 

Maximum package SMT solder reflow Temperature

-

26010 seconds

 

 

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